, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. d44vh10 (npn), d45vh10 (pnp) complementary silicon power transistors these complementary silicon power transistors are designed for high-speed switching applications, such as switching regulator's and high frequency inverters. the devices are also well-suited for drivers for high power switching circuits. features ? fast switching - tf = 90 ns i max i ? key parameters specified (a 100 c ? low collector-emitter saturation voltage - vce(sat)=l-ov(maxi@ 8.0 a ? complementary pairs simplify circuit designs maximum ratings hating collector-emitter voltage collector-emitter voltage emitter base voltage collector current -continuous -peak (note 1 ) "otal power dissipation ; ~- = 25 c derate above 25 c operating and storage junction "^?"oerature range symbol vceo vcev vee pd ji s:c value 80 ??:?: 7.0 15 20 83 0.67 -55 to 150 unit vdc vdc vdc adc :. w c c thermal characteristics characteristic "hermal resistance. junction to case ~ierr^al resistance. junction to ambient maximum lead "emperature for soldering purposes: 1 .'8" from case tor 5 seconds symbol h jo - max 1.5 62.5 275 unit c a . .'. st'esses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse width 6.0ms, duty cycle 50o. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 15a complementary silicon power transistors 80 v, 83 w sty lei pin1. base 2. collector 3 [mit'ch 4. collector to-220ab marking diagram o d4xvh10g ayww i x = 4 or 5 a = assemb^f location y = year ww = work week nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without nonce. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets are current before placing orders quality semi-conductors
d44vh10 (npn), d45vh10 (pnp) electrical characteristics (tc = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector- emitter sustaining voltage (note 2' . ,; = 25 madc. ib = 0) collector-emitter cutoff current (vce = rated vcey. vbe.0~, = 4.0 vdc) (vce = rated vcev. vbe:0"; = 4.0 vdc. ~c = 100 c> emitter base cutoff current iv== = 7.0 vdc. :c = 0) vceofsus) icev 'ebc 80 - - - - - - - - 10 100 10 adc adc on characteristics (note 2) dc current gain (lc = 2.0 adc. vce= 1.0 vdc) = 4.0 adc. vce= 1.0 vdc) collector- emitter saturation voltage (lc = 8.0 adc. ib = 0.4 adc) d44vh10 ? : = 8.0 adc, ib = 0.8 adc) d45vh10 (lc = 15 adc, ib = 3.0 adc. ^c = 100 c) d44vh10 d45vh10 base-emitter saturation voltage (lc = 8.0 adc, ib = 0.4 adc) d44vh1 0 (lc = 8.0 adc. ib = 0.8 adc) d45vh10 ; = 8.0 adc. ib = 0.4 adc, ~c = 100 c) d44vh10 c = 8.0 adc. ib = 0.8 adc. tc = 1ck " d45vh1 0 hpe vbe:ss! 35 20 - - - - - - 0.4 1.0 0.8 1.5 1.2 1.0 1.1 1.5 vdc vdc dynamic characteristics current gain bandwidth product (lc = 0.1 adc. vce = 10 vdc. f = 20 mhz'. output capacitance (vcb = 10 vdc, i- = 0 w = lomhzi d44vh10 d45vh10 f- - - - 5: 120 275 - - mhz switching characteristics delay time rise ~ime storage time fall ~ime (vcc = 20 vdc. lc = 8.0 adc. ib- = ib2 = 0.8 adc) ta tr is ?' - - - - - - - 50 250 700 90 2. pulse test: pulse width 300 s. duty cycle 2o.
20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 d0201yr diac the 00201 bidirectional trigger diode is a low cost pnpn element suitable for triggering triac's. these parts are fabricated using tag's high perfor- mance glassivated process and are in- tended for high volume applications. do 35 absolute maximum ratings ta?25 c unless otherwise noted parameter part nr. break-over voltage d0201yr peak current operating temperature storage temperature soldering temperature symbol vbo ip tj tstg tsld min. 29 -4o -40 nom. max. 32 35 2 125 125 250 unit v a c c c test conditions 10 ps pulse, 120 hz repetition 1.6 mm from case, 10s max. figure 2 electrical characteristics parameter ta = 25c unless otherwise noted symbol min. max. unit test conditions break-over voltage symmetry aveo 3 v break-over current ibo 50 pa ct=27 nfsee figure 3 peak output voltage vp 5 v ct = 0.1 pf see figure 3 figure 1 figure 2 figure 3 voltage breakover 1 f ^^^ voltage ^?? ? _ v(bo) u o 1 _^_^ l|? j ? breakover ^^^^ ? 1 1 current >y / i(bo) -v(bo) v + v(bo) o ' -v(bo) . -ip : /^\ \j=^- ~| 1 ht ov^ o 4 ^ d0201 f-o? w? o? _ct rl 20q" yr t : vp i nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
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